Minimal conductivity and signatures of quantum criticality in ballistic graphene bilayer
arXiv:1407.1684 · doi:10.1209/0295-5075/107/47005
Abstract
We study the ballistic conductivity of graphene bilayer in the presence of next-nearest neighbor hoppings between the layers. An undoped and unbiased system was found in Ref. [1] to show a nonuniversal (length-dependent) conductivity , approaching the value of for large . Here we demonstrate one-parameter scaling and determine the scaling function . The scaling flow has an attractive fixed point [, ] reproducing the scenario predicted for random impurity scattering of Dirac fermions with Coulomb repulsion, albeit the system considered is perfectly ballistic and interactions are not taken into account. The role of electrostatic bias between the layers is also briefly discussed.
RevTeX, 5 pages, 4 figures
References in corpus (18)
- Anderson Transitions
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Andreev reflection and Klein tunneling in graphene
- Asymmetry gap in the electronic band structure of bilayer graphene
- The electronic properties of bilayer graphene
- The optical conductivity of graphene in the visible region of the spectrum
- Quantum-limited shot noise in graphene
- Phase Coherent Transport of Charges in Graphene Quantum Billiard
- Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
- Topological delocalization of two-dimensional massless Dirac fermions
- Shot Noise in Ballistic Graphene
- Ballistic transmission through a graphene bilayer
- Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
- Role of the trigonal warping on the minimal conductivity of bilayer graphene
- A proof of the Kramers degeneracy of transmission eigenvalues from antisymmetry of the scattering matrix
- Conformal mapping and shot noise in graphene
- Anisotropic minimal conductivity of graphene bilayers