AA-stacked bilayer graphene in an applied electric field: Tunable antiferromagnetism and coexisting exciton order parameter
arXiv:1406.7368 · doi:10.1103/PhysRevB.90.155415
Abstract
We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the transverse bias voltage, at least partially. The inter-plane Coulomb repulsion and non-zero voltage stabilize an exciton order parameter. The exciton order parameter coexists with the antiferromagnetism and can be as large as several tens of meV for realistic values of the bias voltage and interaction constants. The application of a transverse bias voltage can be used to control the transport properties of the bilayer.
8 pages, 6 figures
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Cited by in corpus (3)
- Antiferromagnetic ordering and excitonic pairing in the AA-stacked bilayer graphene
- Excitonic condensation and metal-semiconductor transition in AA bilayer graphene in the external magnetic field
- Applied electric and magnetic field effects on the bandgap formation and antiferromagnetic ordering in AA-stacked Bilayer Graphene