General approach to the understanding the electronic structure of graphene on metals

Abstract

This manuscript presents the general approach to the understanding of the connection between bonding mechanism and electronic structure of graphene on metals. To demonstrate its validity, two limiting cases of the "weakly" and "strongly" bonded graphene on Al(111) and Ni(111) are considered, where the Dirac cone is preserved or fully destroyed, respectively. Furthermore, the electronic structure, i. e. doping level, hybridization effects, as well as a gap formation at the Dirac point of the intermediate system, graphene/Cu(111), is fully understood in the framework of the proposed approach. This work summarises the long-term debates regarding connection of the bonding strength and the valence band modification in the graphene/metal systems and paves a way for the effective control of the electronic states of graphene in the vicinity of the Fermi level.

arXiv commentmanuscript and supplementary material

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Cited by in corpus (11)

• Graphene growth and properties on metal substrates
• Universal classification of twisted, strained and sheared graphene moiré superlattices
• Restoring a free-standing character of graphene on Ru(0001)
• Decoupling of graphene from Ni(111) via oxygen intercalation
• Scanning probe microscopy and spectroscopy of graphene on metals
• Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after
• Spectroscopic and DFT studies of graphene intercalation systems on metals
• Intercalation of Mn in graphene/Cu(111) interface: insights to the electronic and magnetic properties from theory
• Determining the Proximity Effect Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism
• Graphene Layer Morphology as an Indicator of the Metals Alloy Formation at the Interface
• Electronic structure and magnetic properties of the graphene/Ni3Mn/Ni(111) trilayer