Epitaxial stabilization of ultra thin films of electron doped manganites

Abstract

Ultra-thin films of the electron doped manganite La${}_{0.8}$Ce${}_{0.2}$MnO${}_3$ were grown in a layer-by-layer growth mode on SrTiO${}_3$ (001) substrates by pulsed laser interval deposition. High structural quality and surface morphology was confirmed by a combination of synchrotron based x-ray diffraction and atomic force microscopy. Resonant X-ray absorption spectroscopy measurements confirm the presence of Ce${}^{+4}$ and Mn${}^{+2}$ ions. In addition, the electron doping signature was corroborated by Hall effect measurements. All grown films show ferromagnetic ground state as revealed by both XMCD and magnetoresistance measurements and remain insulating contrary to earlier reports of metal-insulator transition. Our results hint at the possibility of electron-hole asymmetry in the colossal magnetoresistive (CMR) manganite phase diagram akin to high-$T_c$ cuprates.

References in corpus (1)

• Transport, magnetic, and structural properties of La${}_{0.7}$Ce${}_{0.3}$MnO${}_3$ thin films. Evidence for hole-doping

Cited by in corpus (3)

• Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures
• Polar catastrophe in ultra-thin limit: A case of rare-earth perovskite LaNiO3
• Electrical-transport characteristics of as-grown and oxygen-reduced La${}_{0.7}$Ce${}_{0.3}$MnO${}_3$ films: calculation of hopping energies, Mn valences, and carrier localization lengths