Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions
arXiv:1403.3507 · doi:10.1063/1.4869563
Abstract
We report the development of superconducting tantalum nitride (TaN) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO and TaO (Cu-AlO-Al-TaN and Cu-TaO-TaN), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature of the TaN film at K down to 0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.
arXiv commentAppl. Phys. Lett. in press
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