Phenomenological model for charge dynamics and optical response of disordered systems: application to organic semiconductors
arXiv:1403.2693 · doi:10.1103/PhysRevB.89.235201
Abstract
We provide a phenomenological formula which describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows to extract, from experimental data on the optical conductivity, the relevant microscopic parameters determining the transport properties, such as the carrier localization length and the elastic and inelastic scattering times. This general formula is tested and applied here to organic semiconductors, where dynamical molecular disorder is known to play a key role in the transport properties. The present treatment captures the basic ideas underlying the recently proposed transient localization scenario for charge transport, extending it from the d.c. mobility to the frequency domain. When applied to existing optical measurements in rubrene FETs, our analysis provides quantitative evidence for the transient localization phenomenon. Possible applications to other disordered electronic systems are briefly discussed.
arXiv commentextended version with optical conductivity formulas for both non-degenerate and degenerate electron systems
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- Spin-reorientation-induced band gap in FeSn: Optical signatures of Weyl nodes
- Rise and Fall of Landau's Quasiparticles While Approaching the Mott Transition
- Modelization of charge carriers mobilities in halide perovskites: Fröhlich scattering and quantum localization effects in a dynamic disorder regime
- Optical study of RbVSb: Multiple density-wave gaps and phonon anomalies
- On dynamical localization corrections to band transport
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- Coherent charge carrier dynamics in the presence of thermal lattice vibrations
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- Pressure evolution of electron dynamics in the superconducting kagome metal CsVSb
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- High-pressure modulation of breathing kagome lattice: Cascade of Lifshitz transitions and evolution of the electronic structure