Influence of gas ambient on charge writing at the LaAlO3/SrTiO3 heterointerface

Abstract

We investigated the influences charge writing on the surface work function and resistance of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments (air, O2, N2, and H2/N2). Charge writing decreased the surface work function and resistance of the LAO/STO sample quite a lot in air but slightly in O2.The interface carrier density was extracted from the measured sheet resistance and compared with that obtained from the proposed charge-writing mechanisms, such as carrier transfer via surface adsorbates and surface redox. Such quantitative analyses suggested that additional processes (e.g., electronic state modification and electrochemical surface reaction) were required to explain charge writing on the LAO/STO interface.

17 pages, 4 figures

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Cited by in corpus (3)

• Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water
• Polarity-field driven conductivity in SrTiO${}_3$/LaAlO${}_3$: a hybrid functional study
• Reconfigurable Oxide Nanoelectronics by Tip-induced Electron Delocalization