Polishing of {100} and {111} single crystal diamond through the use of Chemical Mechanical Polishing

Abstract

Diamond is one of the hardest and most difficult to polish materials. In this paper, the polishing of {111} and {100} single crystal diamond surfaces by standard Chemical Mechanical Polishing, as used in the silicon industry, is demonstrated. A Logitech Tribo Chemical Mechanical Polishing system with Logitech SF1 Syton and a polyurethane/polyester polishing pad was used. A reduction in roughness from 0.92 to 0.23 nm root mean square (RMS) and 0.31 to 0.09 nm RMS for {100} and {111} samples respectively was observed.

13 pages 3 figures, ELHT and SM have contributed equally to the work

References in corpus (2)

• Chemical mechanical polishing of thin film diamond
• Low dimensionality of the diamond surface conductivity

Cited by in corpus (5)

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• Redox agent enhanced chemical mechanical polishing of thin film diamond
• Adhesion, Friction and Tribochemical Reactions at the Diamond-Silica Interface
• Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
• Can ultraprecision polishing techniques improve the coherence times of nitrogen-vacancy centers in diamond?