Evolution and defect analysis of vertical graphene nanosheets

Abstract

We report catalyst-free direct synthesis of vertical graphene nanosheets (VGNs) on SiO2/Si and quartz substrates using microwave electron cyclotron resonance - plasma enhanced chemical vapor deposition. The evolution of VGNs is studied systematically at different growth stages. Raman analysis as a function of growth time reveals that two different disorder-induced competing mechanisms contributing to the defect band intensity. The VGNs grown on SiO2/Si substrates predominantly consists of both vacancy-like and hopping defects. On the other hand, the VGNs grown on quartz substrates contain mainly boundary-like defects. XPS studies also corroborate Raman analysis in terms of defect density and vacancy-like defects for the VGNs grown on SiO2/Si substrates. Moreover, the grown VGNs exhibit a high optical transmittance from 95 to 78 % at 550 nm and the sheet resistance varies from 30 to 2.17 kohms/square depending on growth time.

19 pages, 8 figures, 1 table; Accepted in Journal of Raman Spectroscopy (2014)

References in corpus (3)

• Raman spectroscopy as a versatile tool for studying the properties of graphene
• Probing the Nature of Defects in Graphene by Raman Spectroscopy
• Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands

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