Coherent spin transport and suppression of spin relaxation in InSb nanowires with single subband occupancy at room temperature

Abstract

A longstanding goal of spintronics is to inject, coherently transport, and detect spins in a semiconductor nanowire where a SINGLE quantized subband is occupied at room temperature. Here, we report achieving this goal in 50-nm diameter InSb nanowires by demonstrating both the spin-valve and the Hanle effect. The spin relaxation time in the nanowires was found to have increased by an order of magnitude over what has been reported in bulk and quantum wells due to the suppression of D'yakonov-Perel' spin relaxation as a result of single subband occupancy. These experiments raise hopes for the realization of a room-temperature Datta-Das spin transistor.

References in corpus (7)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves
• Spin relaxation of conduction electrons in bulk III-V semiconductors
• Electrical detection of spin accumulation and spin precession at room temperature in metallic spin valves
• Issues pertaining to D'yakonov-Perel' spin relaxation in quantum wire channels
• Oblique Hanle Effect in Semiconductor Spin Transport Devices

Cited by in corpus (3)

• Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces
• Modulating spin relaxation in nanowires with infrared light at room temperature
• Energy-efficient hybrid spintronic-straintronic reconfigurable bit comparator