Mechanically induced pseudo-magnetic fields in the excitonic fine structures of droplet epitaxial quantum dots

Abstract

We present numerical investigations based on the Luttinger-Kohn four-band $k\cdot p$ theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under uni-axial stress control. In the formalisms, stressing a photo-excited quantum dot is equivalent creating a pseudo-magnetic field that is directly coupled to the pseudo-spin of the exciton doublet and tunable to tailor the polarized fine structure of exciton. The latter feature is associated with the valence-band-mixing of exciton that is especially sensitive to external stress in inherently unstrained droplet epitaxial GaAs/AlGaAs quantum dots and allows us to mechanically design and prepare any desired exciton states of QD photon sources prior to the photon generation.

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References in corpus (4)

• Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
• Electric-field-induced coherent coupling of the exciton states in a single quantum dot
• Complete control of a matter qubit using a single picosecond laser pulse
• Engineering quantum dots for electrical control of the fine structure splitting

Cited by in corpus (2)

• Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy
• Optimal electro-mechanical control of the excitonic fine structures of droplet epitaxial quantum dots