Valley Contrasting Magnetoluminescence in Monolayer MoS${}_2$ Quantum Hall Systems

Abstract

The valley dependent optical selection rules in recently discovered monolayer group-VI transition metal dichalcogenides (TMDs) make possible optical control of valley polarization, a crucial step towards valleytronic applications. However, in presence of Landaul level(LL) quantization such selection rules are taken over by selection rules between the LLs, which are not necessarily valley contrasting. Using MoS${}_2$ as an example we show that the spatial inversion-symmetry breaking results in unusual valley dependent inter-LL selection rules, which directly locks polarization to valley. We find a systematic valley splitting for all Landau levels (LLs) in the quantum Hall regime, whose magnitude is linearly proportional to the magnetic field and in comparable with the LL spacing. Consequently, unique plateau structures are found in the optical Hall conductivity, which can be measured by the magneto-optical Faraday rotations.

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• Advanced Materials and Device Architectures for Magnetooptical Spatial Light Modulators
• Landau levels and Shubnikov-de Haas oscillations in monolayer transition metal dichalcogenide semiconductors
• Landau Levels in 2D materials using Wannier Hamiltonians obtained by first principles
• Many-body exciton and inter-valley correlations in heavily electron-doped WSe${}_2$ monolayers
• Spin splitting with persistent spin textures induced by the line defect in 1T-phase of monolayer transition metal dichalcogenides
• Electric Dipole Spin Resonance of 2D Semiconductor Spin Qubits
• Monolayer transition metal dichalcogenides in strong magnetic fields: Validating the Wannier model using a microscopic calculation
• Excitonic magneto-optics in monolayer transition metal dichalcogenides: From nanoribbons to two-dimensional response
• Quantum magnetotransport in a bilayer MoS2: influence of a perpendicular electric field
• High-Order Multipole Radiation from Quantum Hall States in Dirac Materials
• Magneto-optical conductivity of monolayer transition metal dichalcogenides in the presence of proximity-induced exchange interaction and external electrical field
• Topological nature of in-gap bound states in disordered large-gap monolayer transition metal dichalcogenides