Transient Carrier Dynamics in a Mott Insulator with Antiferromagnetic Order

Abstract

We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for the transient carrier dynamics are presented based on the two dimensional $t-J$ model. Time dependences of the optical conductivity spectra as well as the one-particle excitation spectra are calculated based on the Keldysh Green's function formalism at zero temperature combined with the self-consistent Born approximation. At early stage after dynamical hole doping, the Drude component appears, and then incoherent components originating from hole-magnon scatterings start to grow. Fast oscillatory behavior due to coherent magnon, and slow relaxation dynamics are confirmed in the spectra. Time profiles are interpreted as that doped bare holes are dressed by magnon clouds, and are relaxed into spin polaron quasi-particle states. Characteristic relaxation times for Drude and incoherent peaks strongly depend on momentum of a dynamically doped hole, and the exchange constant. Implications to the recent pump-probe experiments are discussed.

13 pages, 14 figures

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• Non-equilibrium electronic transport in a one-dimensional Mott insulator
• Nonequilibrium quantum dynamics of a charge carrier doped into a Mott insulator
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