Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise

Abstract

The electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field is investigated. Two different sources of fluctuations are considered: (i) a symmetric dichotomous noise and (ii) a Gaussian correlated noise. Monte Carlo numerical simulations show, in both cases, an enhancement of the spin relaxation time by increasing the amplitude of the external noise. Moreover, we find that the electron spin lifetime versus the noise correlation time: (i) increases up to a plateau in the case of dichotomous random fluctuations, and (ii) shows a nonmonotonic behaviour with a maximum in the case of bulks subjected to a Gaussian correlated noise.

6 pages, 3 figures

References in corpus (8)

• Ultra-fast spin dynamics: the effect of colored noise
• Theory of spin noise in nanowires
• Spin-orbit coupling in bulk GaAs
• Kinetics of self-induced aggregation of Brownian particles: non-Markovian and non-Gaussian features
• Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
• Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric fields
• Noise influence on electron dynamics in semiconductors driven by a periodic electric field
• New insights into electron spin dynamics in the presence of correlated noise

Cited by in corpus (1)

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