Investigation of Magnetic Proximity Effect inTa/YIG Bilayer Hall Bar Structure
arXiv:1311.1262 · doi:10.1063/1.4863486
Abstract
In this work, the investigation of magnetic proximity effect was extended to Ta which has been reported to have a negative spin Hall angle. Magnetoresistance and Hall measurements for in-plane and out-of-plane applied magnetic field sweeps were carried out at room temperature. The size of the MR ratio observed (~10-5) and its magnetization direction dependence are similar to that reported in Pt/YIG, both of which can be explained by the spin Hall magnetoresistance theory. Additionally, a flip of magnetoresistance polarity is observed at 4 K in the temperature dependent measurements, which can be explained by the magnetic proximity effect induced anisotropic magnetoresistance at low temperature. Our findings suggest that both magnetic proximity effect and spin Hall magnetoresistance have contribution to the recently observed unconventional magnetoresistance effect.
58th MMM contributing paper
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- Experimental test of the spin mixing interface conductivity concept
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- Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration
- Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces
- Suppression of the fieldlike spin-orbit torque efficiency due to the magnetic proximity effect in ferromagnet/platinum bilayers
- Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12
- Estimating spin diffusion length and spin Hall angle from spin pumping-induced inverse spin Hall voltages
- Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO
- Spin circuit representation of spin pumping
- 0- transition driven by magnetic proximity effect in a Josephson junction