Non-Ohmic behavior of carrier transport in highly disordered graphene

Abstract

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field..

arXiv commentReported by nanotechweb.org. Two references added

References in corpus (21)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Control of graphene's properties by reversible hydrogenation
• Graphane: a two-dimensional hydrocarbon
• A Graphene Field-Effect Device
• Observation of the Fractional Quantum Hall Effect in Graphene
• Colloquium: The transport properties of graphene: An introduction
• Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
• Electron Transport in Disordered Graphene Nanoribbons
• Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor
• Efros-Shklovskii variable range hopping in reduced graphene oxide sheets of varying carbon sp2 fraction
• Disorder-induced gap behavior in graphene nanoribbons
• Quantized conductance of a suspended graphene nanoconstriction
• Disorder and Electronic Transport in Graphene
• Tuning the electronic transport properties of graphene through functionalisation with fluorine
• A road to hydrogenating graphene by a reactive ion etching plasma
• Coulomb Blockade and Hopping Conduction in Graphene Quantum Dots Array
• Conductance quantization in graphene nanoconstrictions with mesoscopically smooth but atomically stepped boundaries

Cited by in corpus (3)

• Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport
• Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene
• Induced Maxwell-Chern-Simons Effective Action in Very Special Relativity