GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag${}_2$S Devices

Abstract

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag${}_2$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we studied the nature of electron transport in the active volume of the memristive junctions showing that both the ON and OFF states correspond to truly nanometer scale, highly transparent metallic channels. Our results demonstrate the merits of Ag${}_2$S nanojunctions as nanometer-scale memory cells with GHz operation frequencies.

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Cited by in corpus (6)

• Asymmetry-induced resistive switching in Ag-Ag${}_2$S-Ag memristors enabling a simplified atomic-scale memory design
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• Multiscale Modeling of Metal/Oxide/Metal Conductive Bridging Random Access Memory Cells: from Ab Initio to Finite Element Calculations
• Quantum transport properties of tantalum-oxide resistive switching filaments
• Reconfigurable multiplier architecture based on memristor-cmos with higher flexibility
• Minimum entropy production effect on a quantum scale