Spin diffusion and magnetoresistance in ferromagnet/topological-insulator junctions
arXiv:1310.3354 · doi:10.1103/PhysRevB.89.035408
Abstract
We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation in the ferromagnet and junction magnetoresistance associated with a current bias along the interface.
7 pages, 1 figure
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Cited by in corpus (11)
- Antidamping torque-induced switching in biaxial antiferromagnetic insulators
- Spin-Torque Generation in Topological-Insulator-Based Heterostructures
- Inducing magnetism onto the surface of a topological crystalline insulator
- Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators
- Pure spin current devices based on ferromagnetic topological insulators
- Spin-charge transport driven by magnetization dynamics on disordered surface of doped topological insulators
- Edge spin transport in the disordered two-dimensional topological insulator WTe
- Tunable spin-charge conversion through topological phase transitions in zigzag nanoribbons
- Thermal and electrical quantum Hall effects in ferromagnet-topological insulator-ferromagnet junction
- Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator
- Current response of a topological insulator to a static Zeeman field