paper

Spin diffusion and magnetoresistance in ferromagnet/topological-insulator junctions

arXiv:1310.3354 · doi:10.1103/PhysRevB.89.035408

Abstract

We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation in the ferromagnet and junction magnetoresistance associated with a current bias along the interface.

7 pages, 1 figure

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