Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells

Abstract

We demonstrated the control of ferromagnetism in a surface quantum well containing a 5-nm-thick n-type ferromagnetic semiconductor (In,Fe)As layer sandwiched between two InAs layers, by manipulating the carrier wavefunction. The Curie temperature (Tc) of the (In,Fe)As layer was effectively changed by up to 12 K (ΔTc/Tc = 55%). Our calculation using the mean-field Zener theory reveals an unexpectedly large s-d exchange interaction in (In,Fe)As. Our results establish an effective way to control the ferromagnetism in quantum heterostructures of n-type FMSs, as well as require reconsideration on the current understanding of the s-d exchange interaction in narrow gap FMSs.

28 pages icluding both main text(15 pages, 4 figures) and supplementary information (13 pages)

References in corpus (1)

• Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor

Cited by in corpus (5)

• Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor
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• Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism
• Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures
• Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb