Design and Testing of Kinetic Inductance Detectors Made of Titanium Nitride

Abstract

To use highly resistive material for Kinetic Inductance Detectors (KID), new designs have to be done, in part due to the impedance match needed between the KID chip and the whole 50 ohms readout circuit. Chips from two new hybrid designs, with an aluminum throughline coupled to titanium nitride microresonators, have been measured and compared to a TiN only chip. In the hybrid chips, parasitic temperature dependent box resonances are absent. The dark KID properties have been measured in a large set of resonators. A surprisingly long lifetime, up to 5.6 ms is observed in a few KIDs. For the other more reproducible devices, the mean electrical Noise Equivalent Power is 5.4 10-19 W.Hz1/2.

References in corpus (2)

• Disorder-Induced Inhomogeneities of the Superconducting State Close to the Superconductor-Insulator Transition
• Number fluctuations of sparse quasiparticles in a superconductor

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• Evaluating Superconductors through Current Induced Depairing
• Epitaxial titanium nitride microwave resonators: Structural, chemical, electrical, and microwave properties
• Simulation of a rapid qubit readout dependent on the transmission of a single fluxon