Exploring semiconductor substrates for Silicene epitaxy

Abstract

We have carried out first-principles based DFT calculation on electronic properties of silicene monolayer on various (111) semi-conducting surfaces. We find that the relative stability and other properties of the silicene overlayer depends sensitively on whether the interacting top layer of the substrate is metal or non-metal terminated. The nature of silicene-monolayer on the metal termi- nated surface can be metallic or even magnetic, depending upon the choice of the substrate. The silicene overlayer undergoes n-type doping on metal terminated surface while it undergoes p-type doping on non metal terminated surfaces of the semiconductor substrates.

5 journal pages, 3 figures

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Cited by in corpus (7)

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• Exploring semiconductor substrates for Silicene epitaxy
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• Solid argon as a possible substrate for quasi-freestanding silicene
• Interband $\pi$-like plasmon in silicene grown on silver
• Silicene on metallic quantum wells - an efficient way of tuning silicene-substrate interaction