Chemically gated electronic structure of a superconducting doped topological insulator system

Abstract

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu${}_x$Bi${}_2$Se${}_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

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Cited by in corpus (4)

• Classification of topological quantum matter with symmetries
• Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators
• Magnetic Proximity Effect and Interlayer Exchange Coupling of Ferromagnetic/Topological Insulator/Ferromagnetic Trilayer
• Chemical Gating of a Weak Topological Insulator: Bi14Rh3I9