Broadband ferromagnetic resonance characterization of GaMnAs thin films
arXiv:1308.1232 · doi:10.1063/1.4823740
Abstract
The precessional magnetization dynamics of GaMnAs thin films are characterized by broadband network analyzer ferromagnetic resonance (FMR) in a coplanar geometry at cryogenic temperatures. The FMR frequencies are characterized as function of in-plane field angle and field amplitude. Using an extended Kittel model of the FMR dispersion the magnetic film parameters such as saturation magnetization and anisotropies are derived. The modification of the FMR behavior and of the magnetic parameters of the thin film upon annealing is analyzed.
4 pages, 4 figures, 1 table
References in corpus (10)
- Theory of ferromagnetic (III,Mn)V semiconductors
- Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique
- Photo-induced precession of magnetization in ferromagnetic (Ga,Mn)As
- Light-induced magnetization precession in GaMnAs
- Coherent Magnetization Precession in GaMnAs induced by Ultrafast Optical Excitation
- Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As
- Inductive determination of the optimum tunnel barrier thickness in magnetic tunnelling junction stacks for spin torque memory applications
- Temperature dependent dynamic and static magnetic response in magnetic tunnel junctions with Permalloy layers
- Broadband electrical detection of spin excitations in (Ga,Mn)As using a photovoltage technique
- Towards wafer scale inductive determination of magnetostatic and dynamic parameters of magnetic thin films and multilayers