Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

Abstract

Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to β particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.

References in corpus (5)

• Tests of the standard electroweak model in beta decay
• \textsc{MaGe} - a {\sc Geant4}-based Monte Carlo Application Framework for Low-background Germanium Experiments
• Measurement of the neutron $\beta$-asymmetry parameter $A_0$ with ultracold neutrons
• Precision measurements of the ${}^{60}$Co $\beta$-asymmetry parameter in search for tensor currents in weak interactions
• Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

Cited by in corpus (8)

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• Kinematic sensitivity to the Fierz term of $\beta$-decay differential spectra
• Measurement of the $\beta$-asymmetry parameter of ${}^{67}$Cu in search for tensor type currents in the weak interaction
• Simultaneous Measurements of the Beta Neutrino Angular Correlation in ${}^{32}$Ar Pure Fermi and Pure Gamow-Teller Transitions using Beta-Proton Coincidences
• First measurements with a new $\beta$-electron detector for spectral shape studies
• single-electron events and 0νββ events in CdZnTe: A Monte Carlo simulation study
• Measurement of $\beta$-particles to determine cross sections relevant to the weak r-process
• Measurement of $\beta$-decay end point energy with Planar HPGe detector