Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

Abstract

The performance of a Si PIN diode (type Hamamatsu S3590-06) as an energy sen- sitive detector operating at cryogenic temperatures (~10 K) and in magnetic fields up to 11 T was investigated, using a 207Bi conversion electron source. It was found that the detector still performs well under these conditions, with small changes in the response function being observed in high magnetic fields, e.g. a 30% to 50% decrease in energy resolution. A GEANT4 Monte Carlo simulation showed that the observed effects are mainly due to the modified trajectories of the electrons due to the influence of the magnetic field, which changes the scattering conditions, rather than to intrinsic changes of the performance of the detector itself.

References in corpus (4)

• Measurement of Electron Backscattering in the Energy Range of Neutron $\beta$-Decay
• Studies of Avalanche Photodiode Performance in a High Magnetic Field
• An x-ray detector using PIN photodiodes for the axion helioscope
• Measurement of the thickness of an insensitive surface layer of a PIN photodiode

Cited by in corpus (5)

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• Measurement of the $\beta$-asymmetry parameter of ${}^{67}$Cu in search for tensor type currents in the weak interaction
• A GEANT4 Monte-Carlo Simulation Code for precision beta spectroscopy
• The half-life of ${}^{221}$Fr in Si and Au at 4K and at mK temperatures