Formation of double ring patterns on Co2MnSi Heusler alloy thin film by anodic oxidation under scanning probe microscope
arXiv:1303.7470 · doi:10.1063/1.4794160
Abstract
Double ring formation on Co2MnSi (CMS) films is observed at electrical breakdown voltage during local anodic oxidation (LAO) using atomic force microscope (AFM). Corona effect and segregation of cobalt in the vicinity of the rings is studied using magnetic force microscopy and energy dispersive spectroscopy. Double ring forma-tion is attributed to the interaction of ablated material with the induced magnetic field during LAO. Steepness of forward bias transport characteristics from the unperturbed region of the CMS film suggest a non equilibrium spin contribution. Such mesoscopic textures in magnetic films by AFM tip can be potentially used for memory storage applications.
arXiv comment7 pages, 5 figures
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- Formation of double ring patterns on Co2MnSi Heusler alloy thin film by anodic oxidation under scanning probe microscope
Cited by in corpus (4)
- Structural ordering driven anisotropic magnetoresistance, anomalous Hall resistance and its topological overtones in full-Heusler Co2MnSi thin films
- Magnetoelastic coupling induced magnetic anisotropy in Co(Fe/Mn)Si thin films
- Formation of double ring patterns on Co2MnSi Heusler alloy thin film by anodic oxidation under scanning probe microscope
- Electronic structure and thermoelectric properties of CoTiSi half-Heusler alloy: Doping overtones