Driven Geometric Phase Gates with Trapped Ions

Abstract

We describe a hybrid laser-microwave scheme to implement two-qubit geometric phase gates in crystals of trapped ions. The proposed gates can attain errors below the fault-tolerance threshold in the presence of thermal, dephasing, laser-phase, and microwave-intensity noise. Moreover, our proposal is technically less demanding than previous schemes, since it does not require a laser arrangement with interferometric stability. The laser beams are tuned close to a single vibrational sideband to entangle the qubits, while strong microwave drivings provide the geometric character to the gate, and thus protect the qubits from these different sources of noise. A thorough analytic and numerical study of the performance of these gates in realistic noisy regimes is presented.

arXiv commentcloser to published version

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• Multi-Qubit Gate with Trapped Ions for Microwave and Laser-Based Implementation
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• Micromotion-enabled improvement of quantum logic gates with trapped ions
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• Magnetic field fluctuations analysis for the ion trap implementation of the quantum Rabi model in the the deep strong coupling regime
• Three-Body Bound States of Quantum Particles: Higher Stability Through Braiding
• Robust entanglement by continuous dynamical decoupling of the J-coupling interaction