Theory of helicity-sensitive terahertz radiation detection by field effect transistors
arXiv:1303.0144 · doi:10.1063/1.4801946
Abstract
Within the two antenna model, we develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect arises because of the mixing of the ac signals produced in the channel by the two antennas. We calculate the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage.
4 pages, 3 figures
References in corpus (2)
Cited by in corpus (7)
- High intensity study of THz detectors based on field effect transistors
- Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
- Helicity sensitive plasmonic teraherts interferometer
- Terahertz Plasmonic Detector Controlled by Phase Asymmetry
- Plasmonic Helicity-Driven Detector of terahertz radiation
- Circular THz ratchets in a 2D-modulated Dirac system
- Carbon nanotubes for polarization sensitive terahertz plasmonic interferometry