On the link between Octahedral Rotations and Conductivity in the Domain Walls of BiFeO3
arXiv:1302.3217 · doi:10.1080/07399332.2012.678127
Abstract
We analyze the hypothetical link between octahedral straightening and increased conductivity inside the domain walls of BiFeO3. Our calculations for 109 degree walls predict a lattice parameter expansion of c.a. 1 percent in the direction perpendicular to the wall, and an associated straightening of the octahedral rotation angle of 4 degrees, which is comparable to that observed in the high temperature metallic phase of BiFeO3. On the other hand, in the closely related family of rare-earth orthoferrites, straighter octahedra do not correlate with increased bandgap, which suggests that the correlation between octahedral straightening and bandgap reduction in BiFeO3 is perhaps fortuitous and not necessarily the cause of increased conductivity at the walls.
Article published in a Ferroelectrics special issue conmemorating Prof. J. F. Scott's 70th birthday
References in corpus (6)
- The beta Phase of Multiferroic Bismuth Ferrite and its beta-gamma Metal-Insulator Transition
- Very large spontaneous electric polarization in BiFeO3 single crystals at room temperature and its evolution under cycling fields
- Effect of epitaxial strain on the spontaneous polarization of thin film ferroelectrics
- Conduction at domain walls in insulating Pb(ZrTi)O thin films
- The ferroelectric-paraelectric phase transition in BiFeO3: crystal structure of the orthorhombic beta-phase
- Structural Origin of the Metal-Insulator Transition of Multiferroic BiFeO3