The Coexistence of van Hove Singularities and Superlattice Dirac Points in a Slightly Twisted Graphene Bilayer

Abstract

We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation. The graphene-on-graphene moiré pattern gives rise to a periodic electronic potential, which leads to the emergence of the superlattice Dirac points due to the chiral nature of the charge carriers. Owning to the distinguishing real and reciprocal structures, the sublattice exchange even and odd structures of the twisted graphene bilayer (the two types of commensurate structures) result in two different structures of the superlattice Dirac points. We further calculate the effect of a strain on the low-energy electronic structure of the twisted graphene bilayer and demonstrate that the strain affects the position of the VHSs dramatically.

5 figures, to appear in Phys. Rev. B

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Cited by in corpus (7)

• Superlattice structures in twisted bilayers of folded graphene
• Angle-Dependent van Hove Singularities and Their Breakdown in Twisted Graphene Bilayers
• Optical Phonons in Twisted Bilayer Graphene with Gate-Induced Asymmetric Doping
• Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer
• Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy
• Scanning tunneling microscopy and spectroscopy of nanoscale twisted bilayer graphene
• In-plane Chiral Tunneling and Out-of-plane Valley-polarized Quantum Tunneling in Twisted Graphene Trilayer