Quantum phase slips in superconducting Nb nanowire networks deposited on self-assembled Si templates
arXiv:1210.3521 · doi:10.1063/1.4764066
Abstract
Robust porous silicon substrates were employed for generating interconnected networks of superconducting ultrathin Nb nanowires. Scanning electron microscopy analysis was performed to investigate the morphology of the samples, which constitute of polycrystalline single wires with grain size of about 10 nm. The samples exhibit nonzero resistance over a broad temperature range below the critical temperature, fingerprint of phase slippage processes. The transport data are satisfactory reproduced by models describing both thermal and quantum fluctuations of the superconducting order parameter in thin homogeneous superconducting wires.
accepted for publication on Applied Physics Letters
References in corpus (3)
Cited by in corpus (7)
- Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
- Nonlinear current-voltage characteristics due to quantum tunneling of phase slips in superconducting Nb nanowire networks
- Superconducting MoSi nanowires
- Coherent dynamics in long fluxonium qubits
- Dimensional crossover in the quasi-one-dimensional superconductor TlMoSe
- Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates
- Accessing Phase Slip Events in Nb Meander Wires