Scanning tunneling spectroscopy of layers of superconducting 2H-TaSe: Evidence for a zero bias anomaly in single layers
arXiv:1210.2659 · doi:10.1103/PhysRevB.87.094502
Abstract
We report a characterization of surfaces of the dichalcogenide TaSe using scanning tunneling microscopy and spectroscopy (STM/S) at 150 mK. When the top layer has the 2H structure and the layer immediately below the 1T structure, we find a singular spatial dependence of the tunneling conductance below 1 K, changing from a zero bias peak on top of Se atoms to a gap in between Se atoms. The zero bias peak is additionally modulated by the commensurate charge density wave of 2H-TaSe. Multilayers of 2H-TaSe show a spatially homogeneous superconducting gap with a critical temperature also of 1 K. We discuss possible origins for the peculiar tunneling conductance in single layers.
10 pages, 10 figures
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