Theory of Strain-Controlled Magnetotransport and Stabilization of the Ferromagnetic Insulating Phase in Manganite Thin Films
arXiv:1209.6174 · doi:10.1103/PhysRevLett.110.157201
Abstract
We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.
References in corpus (8)
- Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect
- The Distinct Effects of Homogeneous Weak Disorder and Dilute Strong Scatterers on Phase Competetion in the Manganites
- Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites
- Epitaxial-strain effect on charge/orbital order in Pr0.5Ca0.5MnO3 films
- Local Structure and It's Effect on The Ferromagnetic Properties of LaSrCoO thin films}
- Effect of strain on the orbital and magnetic ordering of manganite thin films and their interface with an insulator
- Highly anisotropic resistivities in the double-exchange model for strained manganites
- Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites