Insulating Behavior of an Amorphous Graphene Membrane
arXiv:1209.5406 · doi:10.1103/PhysRevB.86.121408
Abstract
We investigate the charge transport properties of planar amorphous graphene that is fully topologically disordered, in the form of sp2 three-fold coordinated networks consisting of hexagonal rings, but also including many pentagons and heptagons distributed in a random fashion. Using the Kubo transport methodology and the Lanczos method, the density of states, mean free paths and semiclassical conductivities of such amorphous graphene membranes are computed. Despite a large increase in the density of states close to the charge neutrality point, all electronic properties are dramatically degraded, evidencing an Anderson insulating state caused by topological disorder alone. These results are supported by Landauer-Buttiker conductance calculations, which show a localization length as short as 5 nanometers
References in corpus (9)
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Electronic transport in polycrystalline graphene
- Topological Defects in Graphene: Dislocations and Grain Boundaries
- From Point Defects in Graphene to Two-Dimensional Amorphous Carbon
- Quantum transport of massless Dirac fermions in graphene
- Electron transport in disordered graphene
- Modification of Graphene Properties due to Electron-Beam Irradiation
- Grain Boundary Loops in Graphene