Quantum impurity in the bulk of topological insulator
arXiv:1209.4710 · doi:10.1103/PhysRevB.87.195122
Abstract
We investigate physical properties of an Anderson impurity embedded in the bulk of a topological insulator. The slave-boson mean-field approximation is used to account for the strong electron correlation at the impurity. Different from the results of a quantum impurity on the surface of a topological insulator, we find for the band-inverted case, a Kondo resonant peak and in-gap bound states can be produced simultaneously. However, only one type of them appears for the normal case. It is shown that the mixed-valence regime is much broader in the band-inverted case, while it shrinks to a very narrow regime in the normal case. Furthermore, a self-screening of the Kondo effect may appear when the interaction between the bound-state spin and impurity spin is taken into account.
11 pages, 8 figures
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- Kondo holes in topological Kondo insulators: Spectral properties and surface quasiparticle interference
- Tunable unconventional Kondo effect on topological insulator surfaces
- Suppression of the Kondo Resistivity Minimum in Magnetic Topological Insulators
- Non-magnetic defects in the bulk of two-dimensional topological insulators
- Spin-spin interaction in the bulk of topological insulators
- Quantum spin compass models in 2D electronic topological metasurfaces
- Designing atomic-scale resistive circuits in topological insulators through vacancy-induced localized modes