Tunable magnetic states in h-BN sheets

Abstract

Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be addressable and modifiable through the application of an external drive. We show that defects in hexagonal boron nitride present a strong interplay between the the N-N distance in the edge and the magnetic moments of the defects. By stress-induced geometry modifications, we change the ground state magnetic moment of the defects. This control is made possible by the triangular shape of the defects as well as the strong spin localisation in the magnetic state.

10 pages, 3 figures, published in APL

References in corpus (3)

• Boron nitride substrates for high-quality graphene electronics
• BN white graphene with `colorful' edges--the energies and morphology
• Efficient and accurate three dimensional Poisson solver for surface problems

Cited by in corpus (5)

• Defect-induced magnetism in graphite through neutron irradiation
• Strain-induced modulation of magnetic interactions in graphene
• Embedded Boron Nitride Domains In Graphene Nanoribbons For Transport Gap Engineering
• Strain effect and intermixing at the Si surface: A hybrid quantum and molecular mechanics study
• Growth, charge and thermal transport of flowered graphene