Work, free energy and dissipation in voltage driven single-electron transitions
arXiv:1204.4623 · doi:10.1007/s10909-012-0659-7
Abstract
We apply the general procedure presented by Jarzynski in [1] to the problem of dissipation in a voltage-driven single-electron box. We obtain the expression of dissipated work, and find its relation to the dissipation Q obtained in [2]. We show that the two quantities are identical in common gate protocols where the system makes a transition for sure.
References in corpus (3)
Cited by in corpus (11)
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