Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

Abstract

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

arXiv comment6 pages, 1 figure; Preprint of an article submitted for consideration in [International Journal of Modern Physics: Conference Series] ©[2012] [copyright World Scientific Publishing Company] [http://www.worldscinet.com/ijmpcs.html]

References in corpus (2)

• Multifractal finite-size-scaling and universality at the Anderson transition
• Critical parameters from generalised multifractal analysis at the Anderson transition

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• Self-consistent-field ensembles of disordered Hamiltonians: Efficient solver and application to superconducting films
• Resolution of the exponent puzzle for the Anderson transition in doped semiconductors
• Mesoscopic fluctuations of the single-particle Green's function at Anderson transitions with Coulomb interaction
• Tunneling into the localized phase near Anderson transitions with Coulomb interaction
• Generalized multifractality in the spin quantum Hall symmetry class with interaction
• Mesoscopic fluctuations of the local density of states in interacting electron systems
• Boundary multifractality in the spin quantum Hall symmetry class with interaction
• Analysis of Kohn-Sham Eigenfunctions Using a Convolutional Neural Network in Simulations of the Metal-insulator Transition in Doped Semiconductors