Critical exponent of metal-insulator transition in doped semiconductors: the relevance of the Coulomb interaction

Abstract

We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of the Kohn-Sham eigenfunctions, we find $\nu \approx 1.3$ for the critical exponent of the correlation length. This differs from that of Anderson's model of localization and suggests that the Coulomb interaction changes the universality class of the transition.

6pages, 4figures

References in corpus (6)

• Theoretical Studies of Superconductor-Insulator Transitions
• Critical parameters from generalised multifractal analysis at the Anderson transition
• Dimensional dependence of the metal-insulator transition
• Multifractality at Anderson transitions with Coulomb interaction
• Multifractality and quantum-to-classical crossover in the Coulomb anomaly at the Mott-Anderson metal-insulator transition
• Quantum spin liquids and the metal-insulator transition in doped semiconductors

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