Hole-doping in BaFeAs: The case of BaNaFeAs single crystals
arXiv:1203.0143 · doi:10.1103/PhysRevB.85.224520
Abstract
Single crystals of BaNaFeAs with = 0, 0.25, 0.35, 0.4 were grown using a self-flux high temperature solution growth technique. The superconducting and normal state properties were studied by temperature dependent magnetic susceptibility, electrical resistivity and specific heat revealing that the magnetic and structural transition is rapidly suppressed upon Na-substitution at the Ba-site in BaFeAs, giving rise to superconductivity. A superconducting transition as high as 34 K is reached for a Na-content of =0.4. The positive Hall coefficient confirms that the substitution of Ba by Na results in hole-doping similarly to the substitution of Ba by K. Angle resolved photoemission spectroscopy was performed on all BaNaFeAs crystals. The Fermi surface of hole-doped BaNaFeAs is to high extent the same as the Fermi surface found for the K-doped sister compounds, suggesting a similar impact of the substitution of Ba by either K or Na on the electronic band dispersion at the Fermi level
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