Interlayer magnetic frustration driven quantum spin disorder in honeycomb compound In${}_3$Cu${}_2$VO${}_9$

Abstract

We present electronic and magnetic properties of a honeycomb compound In${}_3$Cu${}_2$VO${}_9$ in this paper. We find that the parent phase is a charge transfer insulator with an energy gap of about 1.5 eV. Singly occupied d${}_{3z^2-r^2}$ electrons of copper ions contribute an $S$ = 1/2 spin, while vanadium ions show nonmagnetism. Oxygen 2$p$ orbitals hybridizing with a small fraction of Cu 3$d$ orbitals dominate the density of states near $E_F$. The planar nearest-neighbor, next-nearest-neighbor and interplane superexchange couplings of Cu spins are $J_1$ $\approx$ 16.2 meV, $J_2$ $\approx$ 0.3 meV and $J_z$ $\approx$ 1.2 meV, suggesting a low-dimensional antiferromagnet \cite{Sondhi10}. We propose that the magnetic frustration along the c-axis leads to a quantum spin disorder in In${}_3$Cu${}_2$VO${}_9$, in accordance with the recent experiments. {abstract}

onsiderably revised version, three figures and a discussion are added

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