Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10-1 mbar oxygen pressure

Abstract

We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.

16 pages, 3 figures

References in corpus (5)

• Why Some Interfaces Cannot be Sharp
• The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface
• Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
• Conducting interfaces between band insulating oxides: the LaGaO3/SrTiO3
• Pulsed laser deposition of SrTiO3/LaGaO3 and SrTiO3/LaAlO3: plasma plume effects

Cited by in corpus (5)

• Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces
• Persistent photoconductivity in 2-dimensional electron gases at different oxide interfaces
• Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface
• Observation of strontium segregation in LaAlO${}_3$/SrTiO${}_3$ and NdGaO${}_3$/SrTiO${}_3$ oxide heterostructures by X-ray photoemission spectroscopy
• In situ Monitoring of Composition and Sensitivity to Growth Parameters of Pulsed Laser Deposition