Proposal of a one-dimensional electron gas in the steps at the LaAlO-SrTiO interface
arXiv:1111.6165 · doi:10.1103/PhysRevLett.108.166802
Abstract
The two-dimensional electron gas (2DEG) at the interface between LaAlO (LAO) and SrTiO (STO) has become one of the most fascinating and highly-debated oxide systems of recent times. Here we propose that a one-dimensional electron gas (1DEG) can be engineered at the step edges of the LAO/STO interface. These predictions are supported by first principles calculations and electrostatic modeling which elucidate the origin of the 1DEG as an electronic reconstruction to compensate a net surface charge in the step edge. The results suggest a novel route to increasing the functional density in these electronic interfaces.
4 pages, 3 figures
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Cited by in corpus (10)
- Locally enhanced conductivity due to the tetragonal domain structure in LaAlO/SrTiO heterointerfaces
- Origin of two-dimensional electron gases at oxide interfaces: insights from theory
- Intrinsic instability of electronic interfaces with strong Rashba coupling
- Phase separation from electron confinement at oxide interfaces
- Phase diagrams of voltage-gated oxide interfaces with strong Rashba coupling
- Inhomogeneous multi-carrier superconductivity at LaXO3/SrTiO3 (X=Al or Ti) oxide interfaces
- Dissipation in a topological Josephson junction
- Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures
- Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films
- Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures