Transport criticality in triangular lattice Hubbard model
arXiv:1111.5371 · doi:10.1143/JPSJ.81.083703
Abstract
We study electric transport near the Mott metal-insulator transition. Optical conductivity of the half-filled Hubbard model on a triangular lattice is calculated based on a cellular dynamical mean field theory including vertex corrections inside the cluster. By investigating the spectrum at low frequencies, we find that a Drude peak on the metallic side smoothly connects to an "ingap" peak on the insulating side. The optical weight of these peaks exhibits a critical behavior with power-law near the Mott critical end point, . We find that the critical exponent differs from the exponents in the thermodynamics.
4 pages, 4 figures
References in corpus (6)
- Unconventional critical behaviour in a quasi-two-dimensional organic conductor
- Universality Classes of Metal-Insulator Transitions in Strongly Correlated Electron Systems and Mechanism of High-Temperature Superconductivity
- Optical conductivity in cluster dynamical mean field theory: formalism and application to high temperature superconductors
- Universality of liquid-gas Mott transitions at finite temperatures
- Importance of subleading corrections for the Mott critical point
- Quantum critical "opalescence" around metal-insulator transitions
Cited by in corpus (4)
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- Transport and spectroscopic signatures of a disorder-stabilized metal in two-dimensional frustrated Mott insulators