Graphene Bilayer Structures with Superfluid Magnetoexcitons
arXiv:1110.0419 · doi:10.1186/1556-276X-7-145
Abstract
We study superfluid behavior of a gas of spatially indirect magnetoexcitons with reference to a system of two graphene layers embedded in a multilayer dielectric structure. The system is considered as an alternative of a double quantum well in a GaAs haterostructure. We determine a range of parameters (interlayer distance, dielectric constant, magnetic field and gate voltage) where magnetoexciton superfluidity can be achieved. Temperature of superfluid transition is computed. A reduction of critical parameters caused by impurities is evaluated and critical impurity concentration is determined.
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Cited by in corpus (12)
- Coulomb drag
- Effect of nonhomogenous dielectric background on the plasmon modes in graphene double-layer structures at finite temperatures
- Resonant manifestations of chiral excitons in magnetooptical Faraday and Kerr effects in topological insulator film
- Theory of carrier transport in graphene double-layer structure with carrier imbalance
- Superfluidity of a rarefied gas of electron-hole pairs in a bilayer system
- Theoretical determination of the effect of a screening gate on plasmon-induced superconductivity in twisted bilayer graphene
- Electromagnetic properties of a double layer graphene system with electron-hole pairing
- Stacking sequence dependence of electronic properties in double-layer graphene heterostructures
- Strong enhancement of third harmonic generation in a double layer graphene system caused by electron-hole pairing
- Current noise and higher order fluctuations in semiconducting bilayer systems
- Electron-hole pairing in topological insulator heterostructures in the quantum Hall state
- Hydrodynamic study of edge spin-vortex excitations of fractional quantum Hall fluid