Spin Accumulation Encoded in Electronic Noise for Mesoscopic Billiards with Finite Tunneling Rates
arXiv:1108.5777 · doi:10.1103/PhysRevB.85.115123
Abstract
We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculation focus on the current-current correlation function for the flux of electrons injected into the quantum dot. The linear response theory used allows to obtain the noise power in the regime of thermal crossover as a function of parameters that reveal the spin polarization at the reservoirs. The calculation is performed employing diagrammatic integration within the universal groups (ensembles of Dyson) for a non-ideal, non-equilibrium chaotic quantum dot. We show that changes in the spin distribution determines significant alteration in noise behavior at values of the tunneling rates close to zero, in the regime of strong reflection at the gates.
New version, 8 pages, 5 figures
References in corpus (10)
- Driven coherent oscillations of a single electron spin in a quantum dot
- Non-collinear Magnetoelectronics
- Electron counting in quantum dots
- Suppression of weak-localization (and enhancement of noise) by tunnelling in semiclassical chaotic transport
- Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
- Measuring Spin Accumulations with Current Noise
- Presence of asymmetric noise in multi-terminal chaotic cavities
- Spin and Charge Shot Noise in Mesoscopic Spin Hall Systems
- Crossover of thermal to shot noise in chaotic cavities
- Effect of Coulomb interaction on current noise in open quantum dots