Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor

Abstract

Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the semiconductor separately by producing OFETs with the same semiconductor (pentacene) combined with different dielectrics (SiO${}_2$ and Cytop). We show, it is possible to fabricate devices which are immune to gate bias stress. For other material combinations, charge trapping occurs in the semiconductor alone, or in the dielectric.

4 pages 3 figures

References in corpus (2)

• Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods
• The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

Cited by in corpus (2)

• Approaching the Trap-Free Limit in Organic Single Crystal Field-Effect Transistors
• Very low bias stress in n-type organic single crystal transistors