Topological Insulator Cell for Memory and Magnetic Sensor Applications
arXiv:1106.2403 · doi:10.1143/APEX.4.094201
Abstract
We propose a memory device based on magnetically doped surfaces of 3D topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the read out process is insensitive to disorder, variations in device geometry, and imperfections in the writing process.
4 pages, 2 figures. Updated figures and text
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Cited by in corpus (9)
- Magnetic proximity effect at the 3D topological insulator/magnetic insulator interface
- Magnetic proximity effect in the 3D topological insulator/ferromagnetic insulator heterostructure
- Modeling Near-Surface Bound Electron States in Three-Dimensional Topological Insulator: Analytical and Numerical Approaches
- Skyrmion-induced bound states on the surface of 3D Topological Insulators
- Topological Properties of SnSe/EuS and SnTe/CaTe Interfaces
- Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures
- Electrical modulation of the edge channel transport in topological insulators coupled to ferromagnetic leads
- Spin accumulation in disordered topological insulator thin films
- Higher Chern Number States in Curved Periodic Nanowires