Effect of non-magnetic impurities on the magnetic states of anatase TiO
arXiv:1106.0794 · doi:10.1088/0953-8984/23/27/276005
Abstract
The electronic and magnetic properties of TiO, TiO, TiON, and TiOF compounds have been studied by using \emph{ab initio} electronic structure calculations. TiO is found to evolve from a wide-band-gap semiconductor to a narrow-band-gap semiconductor to a half-metallic state and finally to a metallic state with oxygen vacancy, N-doping and F-doping, respectively. Present work clearly shows the robust magnetic ground state for N- and F-doped TiO. The N-doping gives rise to magnetic moment of 0.4 at N-site and 0.1 each at two neighboring O-sites, whereas F-doping creates a magnetic moment of 0.3 at the nearest Ti atom. Here we also discuss the possible cause of the observed magnetic states in terms of the spatial electronic charge distribution of Ti, N and F atoms responsible for bond formation.
11 pages, 4 figures To appear J. Phys.: Condens. Matter
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