Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As

Abstract

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.

Final version accepted by Physical Review B

References in corpus (5)

• Spin Transfer Torques
• Theory of ferromagnetic (III,Mn)V semiconductors
• Identification of the dominant precession damping mechanism in Fe, Co, and Ni by first-principles calculations
• Magnetization Dissipation in Ferromagnets from Scattering Theory
• Broadband electrical detection of spin excitations in (Ga,Mn)As using a photovoltage technique